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IGBT单管
Part Number Download Status Product Grade Diode Type

VCES

(V)

Ic@Tc=100℃

(A)

Ic@Tc=25℃

(A)

Vcesat

(V)

Switching Frequency

(KHZ)

Eon

(mJ)

Eoff

(mJ)

Short Current Withstand Time

(us)

Type Package
Active
automotive
industrial
SiC
silicon
0~8
20~45
8~20
FST2.0
FST3.0
TO-220F
TO-247
TO-247plus
TO-247plus-4L
TO-247内绝缘
TO-252
TO-263
TO-263FC
TO-3P
CGB20N65F3TA

Active
industrial
silicon
650
20
40
1.5
8~20
0.54
0.29
5(Vge=17V)
FST3.0
TO-263
CGWT40N120F2KAE

Active
industrial
silicon
1200
40
80
1.7
20~45
3
1.4
5
FST2.0
TO-247
CGB30N65F2SAQ

Active
industrial
silicon
650
30
60
1.62
8~20
0.51